Characterization of threshold voltage instability after program in charge trap flash memory
| Autor: | Si-Young Choi, Sunjung Kim, Joon-Gon Lee, Seung Jae Baik, Bio Kim, Bon-young Koo, Joo-Tae Moon |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
business.industry
Chemistry Electrical engineering Biasing Hardware_PERFORMANCEANDRELIABILITY Overdrive voltage Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Flash memory Threshold voltage Trap (computing) Hardware_GENERAL Logic gate Charge trap flash Hardware_INTEGRATEDCIRCUITS Optoelectronics business Voltage |
| Zdroj: | 2009 IEEE International Reliability Physics Symposium. |
| DOI: | 10.1109/irps.2009.5173265 |
| Popis: | We investigated threshold voltage shifts after program pulse in charge trap flash memory by measuring drain current changes. We have found threshold voltage shifts can be characterized as a function of not only the materials of tunnel oxide, trap layer, blocking layer, but also physical parameters like device size and electrical measurement environment such as program voltage target and gate bias voltage. This approach can identify the root cause of initial threshold voltage shifts in charge trap flash memory devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|