Improved Light Extraction of Nitride-Based Flip-Chip Light-Emitting Diodes Via Sapphire Shaping and Texturing
| Autor: | Yi-Feng Lin, Ray-Hua Horng, Kuo-Sheng Wen, Shao-Hua Huang, Dong-Sing Wuu, Kuo-Wei Yen |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Nitride Atomic and Molecular Physics and Optics Bevel Electronic Optical and Magnetic Materials law.invention Etching (microfabrication) law Sapphire Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Flip chip Diode Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 18:2623-2625 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/lpt.2006.886823 |
| Popis: | A novel flip-chip structure of GaN-sapphire light-emitting diodes (LEDs) was developed to improve the external quantum efficiency, where the sapphire substrate was textured and shaped with beveled sidewalls using a wet etching technique. The forward voltage of the conventional flip-chip and shaped flip-chip GaN LEDs were 2.84 and 2.85 V at 20 mA, respectively. This indicates that the GaN LED was not destroyed during the sapphire wet etching process. It was found that the output power increased from 9.3 to 14.2 mW, corresponding to about 52% increases in the external quantum efficiency. The results agree well with the simulation data that the shaped flip-chip GaN LED can provide better light extraction efficiency than that of the conventional flip-chip sample |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|