| Popis: |
Some results of GaSb crystal growth by the Bridgman technique using a seed in the C-18 centrifuge are presented. The crystals grown at a centrifuge acceleration of 5.2g were analyzed by standard metallography, scanning electron microscopy (SEM) and X-ray topography. During crystal growth in a centrifuge, the interface curvature was smaller than with terrestrial and microgravity experiments. Striations in the seed were absent in the remelted crystal. Twins were found only in the last material to grow. Other features of the grown ingots are presented as well. |
