Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1−X Sn x Fine Structures by Using Synchrotron X-ray Microdiffraction

Autor:	Yasuhiko Imai, Shigeru Kimura, Yuki Inuzuka, Wakana Takeuchi, Tomoya Washizu, Shigeaki Zaima, Osamu Nakatsuka, Shinichi Ike
Rok vydání:	2016
Předmět:	Stress (mechanics) Nanostructure Materials science Condensed matter physics law Lattice plane X-ray Heterojunction Chemical vapor deposition Crystal structure Synchrotron law.invention
Zdroj:	ECS Transactions. 75:769-775
ISSN:	1938-6737 1938-5862
DOI:	10.1149/07508.0769ecst
Popis:	We examined the formation of locally strained Ge nanostructures sandwiched between Ge1−x Sn x stressors using metal-organic chemical vapor deposition method. We have investigated the microscopic local strain and stress in the Ge/Ge1−x Sn x heterostructures using synchrotron microdiffraction and finite element method calculation. The microdiffraction measurement for an asymmetric lattice plane enables directly quantitative evaluation of the strain value of an individual Ge fine line structure with a few tens of nanometers width. An in-plane compressive strain value of 0.9% is achieved for a 30 nm-width Ge line with Ge1−x Sn x stressors, which corresponds to a compressive stress of 1.2 GPa.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2b824057e6ee6f44475ccaf3e5f9f99e https://doi.org/10.1149/07508.0769ecst Zobrazit plný text záznamu