Iron pyrite thin films grown through a one-step annealing of iron oxide using sulfur sources, tert-butyl disulfide and H2S
| Autor: | Charles R. Westgate, Adusumilli Siva P, Jeremiah M. Dederick, Sean M. Garner, Tara P. Dhakal, In-Tae Bae, Anju Sharma |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Inorganic chemistry Iron oxide Oxide chemistry.chemical_element 02 engineering and technology engineering.material 010402 general chemistry 01 natural sciences chemistry.chemical_compound X-ray photoelectron spectroscopy Impurity Materials Chemistry Thin film Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Sulfur 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry engineering Atomic ratio Pyrite 0210 nano-technology |
| Zdroj: | Thin Solid Films. 615:271-280 |
| ISSN: | 0040-6090 |
| Popis: | In this work, we report synthesis of pyrite thin films using tert- butyl disulfide (TBDS) and hydrogen sulfide (H 2 S) in one-step atmospheric pressure sulfurization of iron oxide films at 400 °C on a soda-lime glass, molybdenum coated soda-lime glass and sodium-free glass substrates. The iron pyrite thin films grown using TBDS did not require the presence of sodium to form the pyrite phase, whereas H 2 S grown pyrite thin films did. It was observed that the pyrite formation and thus the sulfur diffusion into the oxide film was slower in TBDS compared to H 2 S. The synthesized films were characterized for their surface morphology and phase identification using scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques. The S:Fe atomic ratio as well as their chemical bonding states were monitored to obtain and maintain a stoichiometric 2:1 ratio through the entire film thickness as a function of the sulfurization time by performing an XPS depth profile. Transmittance measurements confirmed the pyrite phase with an optical bandgap of 1.15 eV. The TEM electron-beam diffraction spots were used to verify the impurity phases observed in XRD patterns. Hall Effect measurements showed p-type carriers for the pyrite films. |
| Databáze: | OpenAIRE |
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