Perchlorate-Induced Doping of Electrodeposited ZnO Films for Optoelectronic Applications
| Autor: | Jean Rousset, Arthur Le Bris, Victor Izquierdo-Roca, Maxim Guc, Daniel Lincot, Fabien Tsin, Julien Vidal, Angelica Thomere |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Inorganic chemistry 02 engineering and technology 010402 general chemistry 01 natural sciences Chloride Ion Perchlorate chemistry.chemical_compound Ab initio quantum chemistry methods Lattice (order) medicine Physical and Theoretical Chemistry Thin film business.industry Doping 021001 nanoscience & nanotechnology 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy Oxygen atom chemistry Optoelectronics 0210 nano-technology business medicine.drug |
| Zdroj: | The Journal of Physical Chemistry C. 120:18953-18962 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b03597 |
| Popis: | The aim of this work is to produce via a low cost technique a thin film of ZnO showing optoelectronics properties similar to those one could obtain through various vacuum techniques. In order to achieve such goal, electrodeposition appears to be one of the most interesting approaches. Employing such technique in a Cl-containing bath, a high doping of the ZnO layer can be readily achieved through the substitution of a chloride ion for an oxygen atom in the ZnO lattice: the obtained optoelectronic properties are comparable to the ones of vacuum deposited layer. However, the introduction of chloride was found to be difficult to control, leading to a high concentration of inactive chloride in the ZnO lattice and, as a result, lower electrical performances of the material. In this study, the limitation of chloride doping is evidenced and explained considering the formation of chloride rich compounds. Moreover, ab initio calculations demonstrate that incorporation of perchlorate ions in the ZnO lattice at an ox... |
| Databáze: | OpenAIRE |
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