High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350°C
| Autor: | Min-Koo Han, Sang-Myeon Han, Joong-Hyun Park, Sung-Hwan Choi, Sun-Jae Kim |
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| Rok vydání: | 2008 |
| Předmět: |
Chemistry
Ion plating Nanocrystalline silicon Analytical chemistry Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Pulsed laser deposition Plasma-enhanced chemical vapor deposition Materials Chemistry Ceramics and Composites Thin film Layer (electronics) Plasma processing |
| Zdroj: | Journal of Non-Crystalline Solids. 354:2268-2271 |
| ISSN: | 0022-3093 |
| Popis: | High quality nanocrystalline silicon (nc-Si) film was deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) without substrate RF bias at 350 °C. The nc-Si with a dense crystalline structure of the columnar type grew from the bottom to the top of the nc-Si film. A troublesome incubation layer did not exist at the bottom of the fabricated nc-Si film. A grain size of 40 nm was measured by using a SEM image. When a RF bias of 100 and 200 W was applied to the substrate to induce ion bombardment on the substrate, the crystalline structure and grains were not observed and a-Si deposition became dominant. The transition from nc-Si deposition into a-Si deposition can be attributed to ion bombardment which prevents nucleation and crystal growth at the surface of deposition. This shows that the reduction of ion bombardment can be a key factor to fabricate high quality nc-Si film. By using ICP-CVD with no substrate RF bias, ion bombardment can be reduced, while the density of plasma is kept high, so that high quality nc-Si can be fabricated due to the enhancement of crystalline growth on the surface. |
| Databáze: | OpenAIRE |
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