Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors
| Autor: | Y. A. Tkachenko, H.-C. Chung, J. C. M. Hwang, C. J. Wei |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Differential capacitance business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Optoelectronics Barrier effect Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Capacitance Microwave |
| Zdroj: | Simulation of Semiconductor Devices and Processes ISBN: 9783709173633 |
| Popis: | A capacitance model for microwave Double Heterojunction Bipolar Transistors (DHBTs) is presented to account for their special behavior in small-signal S-parameters. A physical picture of barrier effects in DHBTs is described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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