Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti∕Cr-Cu∕Cu and Ni(P)∕Au metallization pads

Autor:	T. L. Shao, Yung-Fu Chen, S. H. Chiu, Chih Chen
Rok vydání:	2004
Předmět:	Metallurgy Intermetallic General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Electromigration Copper Cathode law.invention Anode chemistry law Soldering Current density
Zdroj:	Journal of Applied Physics. 96:4518-4524
ISSN:	1089-7550 0021-8979
Popis:	54.5° C, and the thermal gradient reached 365 °C/c mwhen stressed by 13 10 4 A/c m 2 . This induced thermal gradient may cause atoms to migrate from the chip side to the substrate side, contributing to the failure in the anode/chip side. Moreover, the formation of intermetallic compounds in the anode/chip side may also be responsible for the failure in the anode/chip side. © 2004 American Institute of Physics. [DOI: 10.1063/1.1788837]
Databáze:	OpenAIRE
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