Impact of NBTI on 8T FinFET based SRAM cell

Autor:	Vikas Mahor, Anugya Saxena, Arti Shrivas, Bharat Tripathi, Apeksha Bhargava, Saurabh Khandelwal
Rok vydání:	2017
Předmět:	Hardware_MEMORYSTRUCTURES Computer science Sram cell Spice Hardware_PERFORMANCEANDRELIABILITY Energy consumption Threshold voltage Power consumption Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering Static random-access memory Hardware_LOGICDESIGN Leakage (electronics)
Zdroj:	2017 International Conference on Recent Innovations in Signal processing and Embedded Systems (RISE).
Popis:	Limited energy consumption in multimedia requires very low power circuits. Performance of SRAM in circuit affects the system, therefore power consumption of SRAM needs to be reduced. Many techniques have been proposed to minimize the leakage current, however they have not been able to reduce significantly. In this paper we have mainly focused on the reduction of Leakage Current in SRAM Cell. A leakage reduction technique has been proposed and implemented on 8T FinFET Based SRAM cell. Effect of NBTI is also observed on the proposed cell. The Simulation has been performed on H Spice at 32nm technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2b4ec7f1d199eadd6bac8e2dec3f310c https://doi.org/10.1109/rise.2017.8378182 Zobrazit plný text záznamu