Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy
| Autor: | Nose Yasuo, Paul D. Brown, Colin J. Humphreys, Koji Matsuda, Hirokazu Tatsuoka, Tsutomu Koga, Hiroshi Kuwabara, Yoshinaga Souno |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Metals and Alloys Surfaces and Interfaces Substrate (electronics) Epitaxy Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography Transmission electron microscopy Phase (matter) Materials Chemistry Thin film Layer (electronics) Deposition (law) |
| Zdroj: | Thin Solid Films. 381:231-235 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(00)01749-1 |
| Popis: | Semiconducting MnSi1.7 and β-FeSi2 layers were grown by the use of Sb surfactant mediated reactive deposition epitaxy (RDE) on Si(111) substrates. The defect microstructure and epitaxial relationship of the layers were examined by transmission electron microscopy (TEM) and the X-ray diffraction technique. Epitaxial MnSi1.7 grown on a Si(111) substrate, adopts the (332),[110]MnSi1.7 subcell//(111),[110]Si epitaxial relationship, where the (332)MnSi1.7 subcell plane is equivalent to, for example, (3322) and (3330) for Mn11Si19 and Mn15Si26, respectively. It has been found that a continuous and relatively smooth β-FeSi2(101)/(110) layer could be also deposited. It is considered that the growth method examined here might be further developed for the deposition of single-phase, high-quality epitaxial layers of other multiple phase alloys. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect