Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal Silicon
Autor: | Changhae Park, Al F. Tasch, Kevin M. Klein, James F. Ziegler |
---|---|
Rok vydání: | 1991 |
Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment business.industry Semiconductor materials chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Ion beam deposition Ion implantation chemistry Materials Chemistry Electrochemistry Single crystal silicon Optoelectronics Boron business Single crystal Nuclear chemistry |
Zdroj: | Journal of The Electrochemical Society. 138:2107-2115 |
ISSN: | 1945-7111 0013-4651 |
DOI: | 10.1149/1.2085934 |
Databáze: | OpenAIRE |
Externí odkaz: |