H2O adsorption kinetics on Si(111)7×7 and Si(111)7×7 modified by laser annealing
| Autor: | Ofer Sneh, M. L. Wise, L.A. Okada, Steven M. George |
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| Rok vydání: | 1995 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1853-1860 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | The adsorption kinetics of H2O on Si(111)7×7 and Si(111)7×7 modified by laser annealing were studied using laser‐induced thermal desorption and temperature‐programmed desorption techniques at temperatures between 180 and 800 K. The laser‐annealed Si(111)7×7 surface displayed an enhanced initial reactive sticking coefficient for H2O compared with the unmodified Si(111)7×7 surface. At 180 K, the initial reactive sticking coefficient was S0=6.9×10−1 on laser‐annealed Si(111)7×7 compared with S0=1.9×10−2 on unmodified Si(111)7×7. This larger initial sticking coefficient is attributed to the creation of a more reactive surface structure formed by the laser annealing process. At higher oxygen coverages, the reactivity of the laser‐annealed surface changed and displayed much slower H2O adsorption rates that were similar to the kinetics on Si(111)7×7. The decreasing initial reactive sticking coefficient versus increasing surface temperature suggested a precursor‐mediated adsorption mechanism on both the Si(111)7×... |
| Databáze: | OpenAIRE |
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