Impact of nitrogen and/or fluorine implantation on deep-submicron Co–salicide process

Autor:	L. M. Kao, T. Y. Chang, Tien-Sheng Chao, T. F. Lei, S. K. Chen, A. Tuan, T. P. Su, S. W. Chen
Rok vydání:	2002
Předmět:	Materials science chemistry.chemical_element Nanotechnology Condensed Matter Physics Salicide Nitrogen Electronic Optical and Magnetic Materials N incorporation chemistry Chemical engineering Gate oxide Scientific method Materials Chemistry Fluorine Electrical and Electronic Engineering
Zdroj:	Solid-State Electronics. 46:1097-1101
ISSN:	0038-1101
DOI:	10.1016/s0038-1101(02)00048-5
Popis:	In our previous study, using NF 3 annealed poly-Si to improve gate oxide integrity for Co–silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO 2 and Co–salicide. In this study, F and/or N will be implanted into poly-Si with/without Co–salicide process, to identify the interaction of N and F in the SiO 2 and Co–salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co–silicide process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2b410c1b6f355d134e85869b85853d58 https://doi.org/10.1016/s0038-1101(02)00048-5 Zobrazit plný text záznamu Full Text from ScienceDirect