Multiphysics Modeling of CMOS Fully Integrated 2.58 THz Thermal Detector
| Autor: | Zhao. Li, Xu. Wang, Mengjie. Li |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Terahertz radiation 010401 analytical chemistry Detector Semiconductor device modeling 01 natural sciences 0104 chemical sciences law.invention 010309 optics Responsivity CMOS law 0103 physical sciences Optoelectronics Resistor Antenna (radio) business Noise-equivalent power |
| Zdroj: | 2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO). |
| Popis: | Terahertz (THz) detectors have shown attractive prospects in the areas of THz sensing and imaging. This paper presents the multi-physics modeling of an on-chip octagonal ring antenna loaded with a polysilicon resistor coupled with a sensitive proportional to absolute temperature (PTAT) sensor using a 55 nm CMOS process, leading to an uncooled monolithic resonant CMOS fully integrated THz thermal detector. The theoretical analysis, multi-physics modeling, and experimental verification of the detector are presented in detail. The maximum responsivity is 38.04 V/W with a noise equivalent power (NEP) of 2.89 μW/Hz0.5 at 2.58 THz for the THz source and an existing atmospheric window, and it has the natural scalability to focal plane arrays, showing great potentials for uncooled, compact, low-cost, easy- integration, and mass-production THz detection systems. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|