Effect of thickness of polymer electret on charge trapping properties of pentacene-based nonvolatile field-effect transistor memory
| Autor: | Wen Li, Laiyuan Wang, Ma Yangxing, Li Huanqun, Wei Huang, Fengning Guo, Haifeng Ling, Yan Bao, Linghai Xie, Mingdong Yi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Nanotechnology 02 engineering and technology Trapping 010402 general chemistry 01 natural sciences Biomaterials Pentacene chemistry.chemical_compound Materials Chemistry Electrical and Electronic Engineering Organic field-effect transistor business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Non-volatile memory chemistry Optoelectronics Field-effect transistor Charge carrier Electret 0210 nano-technology business Voltage |
| Zdroj: | Organic Electronics. 43:222-228 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2017.01.017 |
| Popis: | In this report, a set of pentacene-based organic field-effect transistor (OFET) memory devices using different thicknesses (ranged from 17.8 to 100.4 nm) of Poly (N-vinylcarbazole) (PVK) as charge trapping layers were fabricated, and the dependences of thickness on charge trapping behaviors were systematically investigated. As the thickness increased, the charge trapping capacity shows a Gaussian distributed growth behavior while the surface tunneling distance demonstrates the property of exponential decrease, which is ascribed to the synergistic effects of potential redistribution of trapped charge carriers and the co-existence of direct tunneling and Fowler–Nordheim (FN) tunneling. The optimum thickness ( d ot ) to possess the most efficient charge trapping properties, which means a reasonably low programming voltage and high charge trapping capacity with good bias stress stability, is approximately 40 ± 5 nm. By calculating the threshold thickness ( d th ) of PVK for an ultrathin memory, we proposed a model of superficial tunneling distance to deconstruct the continuous chargeable polymer electret-based OFET memory. Our work provided a quantitative evaluation method and can improve the understanding of charge trapping process from the aspect of electret thickness. |
| Databáze: | OpenAIRE |
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