Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range
| Autor: | Samaresh Das, Vikram Kumar, John Wellington John, Samit K. Ray, Sarmistha Maity, Veerendra Dhyani, Subhrajit Mukherjee |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Absorption spectroscopy Photodetector Bioengineering 02 engineering and technology Photodetection 010402 general chemistry 01 natural sciences law.invention Responsivity law General Materials Science Electrical and Electronic Engineering business.industry Mechanical Engineering Heterojunction General Chemistry 021001 nanoscience & nanotechnology Ray 0104 chemical sciences Photodiode Wavelength Mechanics of Materials Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnology. 31:455208 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/1361-6528/ab95b9 |
| Popis: | Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojunction properties. In this regard, we report a MoSe2/Si heterojunction broadband photodiode which is highly sensitive for a wide spectral range from 405 nm to 2500 nm wavelength with the maximum responsivity of ~ 522 mA/W for 1100 nm of incident light. The hydrothermal synthesis approach leads to the imperfect growth of the MoSe2, creating defects in the lattice, which was confirmed by X-ray photo-spectroscopy. These sub-bandgap defects caused high optical absorption of the SWIR light as observed in the absorption spectra. The speed of the device ranges to 18/10 μsec for 10 kHz modulated light. Furthermore, the photodetector has been fully operational even at zero bias voltage, making it a potential contender for self-powered photodetection. |
| Databáze: | OpenAIRE |
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