| Autor: |
Habib Elhouichet, Meherzi Oueslati, H. Ajlani, S. Dabboussi, A. Moadhen, J.A. Roger |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Journal of Luminescence. 121:507-516 |
| ISSN: |
0022-2313 |
| DOI: |
10.1016/j.jlumin.2005.12.003 |
| Popis: |
Tin oxide (SnO 2 )-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide. The emission properties of rare-earth in SnO 2 are studied systematically against temperature annealing and Tb 3+ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system. The concentration effect shows a quenching of the PL intensity for Tb 3+ concentration above 4%. From the investigation of the decay rate from the 7 F 5 state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO 2 :Tb 3+ and SnO 2 :Eu 3+ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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