Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation
| Autor: | Benyamin Yarmand, Sema Ebrahimi, Amin Bordbar, Aidin Bordbar-Khiabani |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science Mechanical Engineering 02 engineering and technology Substrate (electronics) Electrolyte engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Monocrystalline silicon Electron transfer Chemical engineering Coating Mechanics of Materials Specific surface area engineering General Materials Science 0210 nano-technology Suspension (vehicle) |
| Zdroj: | Materials Letters. 239:151-154 |
| ISSN: | 0167-577X |
| Popis: | rGO/SiO2 composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO2 coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs’ recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO2 coating, impressively. |
| Databáze: | OpenAIRE |
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