| Popis: |
A 8-watt power GaAs MESFET, consisting of two 6/spl times/0.5/spl times/2100 /spl mu/m multi-cell FET of about 4.0 W, can be designed and fabricated in a two-way traveling-wave divider/combiner. The synthesizing power transistor can be realized, producing 8 watts /spl plusmn/1.5 dBm from 5.0 to 6.0 GHz, with a minimum of 7 watts, by using two all-pass matching networks. A two-way hybrid power combining scheme, making use of two 4-watt off-chips, producing 8-watt of power output, is discussed here. Meanwhile, the application of lossy matching networks that absorb the MESFET input capacitance into a simple filter network to provide simultaneous gain flatness and input match is described in this paper. |
