Stark localization in GaAs-GaAlAs superlattices under a low electric field
| Autor: | P. Tronc, J.F. Palmier, C. Cabanel, B. Etienne, Bernard Sermage |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Field (physics) Condensed matter physics Superlattice Exciton Quantum-confined Stark effect Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electron localization function Condensed Matter::Materials Science symbols.namesake Stark effect Electric field symbols General Materials Science Electrical and Electronic Engineering |
| Zdroj: | Superlattices and Microstructures. 9:231-234 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/0749-6036(91)90288-3 |
| Popis: | We show, from the photoluminescence of a GaAs-Ga 0.65 Al 0.35 As superlattice of period 70 A, that the localization of the electrons takes place at low field (∼ 1 × 10 4 V/cm). When the localization begins, the binding energy of the heavy-hole exciton is approximately the same whether the electron wavefunction is centered on the same well as the hole or on adjacent well. The model of eigenfunctions proposed by Bleuse et al. for superlattices under electric field fits our results satisfactorily. A reduction of the electric field applied to the superlattice has been obtained by using a laser beam with photon energies greater than the bandgap width of the barriers. This effect provides accurate measurements of the low field localization. |
| Databáze: | OpenAIRE |
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