Fine-grained nanocrystalline silicon p-layer for high open circuit voltage a-Si:H solar cells
| Autor: | Kai Sun, Xianbo Liao, Wenhui Du, Xianbi Xiang, Xunming Deng, Xiesen Yang |
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| Rok vydání: | 2005 |
| Předmět: |
Amorphous silicon
Materials science Silicon Open-circuit voltage Nanocrystalline silicon Wide-bandgap semiconductor Analytical chemistry chemistry.chemical_element Substrate (electronics) symbols.namesake chemistry.chemical_compound chemistry symbols Raman spectroscopy High-resolution transmission electron microscopy |
| Zdroj: | Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.. |
| DOI: | 10.1109/pvsc.2005.1488402 |
| Popis: | Hydrogenated amorphous silicon (a-Si:H) single-junction solar cells with high open circuit voltage (V/sub oc/) are fabricated using a wide bandgap boron doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H/sub 2/-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by Raman scattering spectroscopy and high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high V/sub oc/ a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. |
| Databáze: | OpenAIRE |
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