| Autor: |
Vladimir F. Chishko, Nikolay B. Zaletaev |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
The performance of Pb 0.8 Sn 0.2 Te photodiodes and photoconductive detectors based on Pb 1-x-y Sn x Ge y Te:In epitaxial films has been investigated in a wide temperature interval and at various background fluxes. It was found that dark current of photodiodes in the temperature range 30 K T T R 0tun at T R og-r at T = 77 K. Detectivity of more than 5 x 10 12 cmHz 1/2 W -1 limited by preamplifier noise at a background of 1 x 10 12 cm -2 s -1 and T = 30 K was experimentally achieved. Pb 1-x-y Sn x Ge y Te:In epitaxial film photoconductive detectors had sensitivity in the spectral range λ 5 A/W at T = 10 K to 10 2 A/W at T = 30 K. Noise of the photoconductive detectors was independent of background flux when it varied from 10 12 cm -2 s -1 to 10 18 cm -2 s -1 . Multielement photoconductive detectors based on these films were fabricated and D * = 1.7 x 10 13 cmHz 1/2 W -1 at T ≤ 25 K was achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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