Single-electron transistors based on gate-induced Si island for single-electron logic application
| Autor: | Jong Duk Lee, Kyung Rok Kim, Byung-Gook Park, Suk-Kang Sung, Dae Hwan Kim |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Nanowire Phase (waves) Electrical engineering Coulomb blockade Silicon on insulator Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Capacitance Computer Science Applications Tunnel junction Logic gate Inverter Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nanotechnology. 1:170-175 |
| ISSN: | 1941-0085 1536-125X |
| DOI: | 10.1109/tnano.2002.807382 |
| Popis: | The island size dependence of the capacitance components of single-electron transistors (SETs) based on gate-induced Si islands was extracted from the electrical characteristics. In the fabricated SETs, the sidewall gate tunes the electrically induced tunnel junctions, and controls the phase of the Coulomb oscillation. The capacitance between the sidewall gate and the Si island extracted from the Coulomb oscillation phase shift of the SETs with sidewall depletion gates on a silicon-on-insulator nanowire was independent of the Si island size, which is consistent with the device structure. The Coulomb oscillation phase shift of the fabricated SETs has the potential for a complementary operation. As a possible application to single-electron logic, the complementary single-electron inverter and binary decision diagram operation on the basis of the Coulomb oscillation phase shift and the tunable tunnel junctions were demonstrated. |
| Databáze: | OpenAIRE |
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