| Popis: |
In this work, we have accomplished an efficient quantitative inquiry on the analog/RF performance of gate-all-around (GAA) junction less Metal oxide field effect transistor(JL MOSFET).Here, we have considered the down scaled gate length and underlap length as two vital design aspects to inquiry the RF/analog performance of the device. A detailed analysis of some figure of merit (FOMs) such as transconductance $(\mathrm{g}_{\mathrm{m}})$ , Outputresistance $(\mathrm{R}_{\mathrm{o}\mathrm{u}\mathrm{t}})$ , transconductance generation factor(TGF), intrinsic gain, cut off frequency $(\mathrm{f}_{\mathrm{T}})$ , maximum frequency of oscillation $(\mathrm{f}_{\max})$ are carried out in accordance with regular down scaling of length of gate and different underlap length towards drain and source. In this work, the recommended device is created and its electrical characteristics are studied using ATLAS 2D device simulator. From the results obtained from simulation it is evident that the RF performances of GAA JL-MOSFET are superior in comparison to their analog counterpart with respect to continual downscaling of gate length. The channel is controlled in gate all around structure which reduces the short channel in terms of drain induced barrier lowering and threshold voltage $(\mathrm{V}_{\mathrm{t}\mathrm{h}})$ variation. GAA JL MOSFET is not only more immune to short channel effect(SCEs) but also it is suitable for analog/RF applications because of its high value of $\mathrm{g}_{\mathrm{m}}$ and $\mathrm{f}_{\mathrm{T}}, \mathrm{f}_{\max}$ . Hence, this work will be beneficial for upcoming generation of RF circuits needed for modern wireless communication systems and high speed switching application. |
