| Autor: |
M. Mihaila, C. Heedt, F. Scheffer, Franz-Josef Tegude |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of 8th International Conference on Indium Phosphide and Related Materials. |
| DOI: |
10.1109/iciprm.1996.492259 |
| Popis: |
For some applications (e.g.: mixers, oscillators), the 1/f noise upconversion limits the microwave performances of all kinds of HEMTs. That is why the origin of 1/f noise in HEMTs is highly needed. Previously it has been suggested that the channel is the main 1/f noise source at low drain bias. Recent experiments performed on different HEMT's structures indicated the InAlAs spacer and buffer as sources of 1/f noise. Some of these experiments also pointed to heterointerfaces as sources of 1/f noise. All these experiments quite clearly established the topology of the 1/f noise sources. A step further would be to answer which microscopic mechanism is responsible for the 1/f noise generation in a two-dimensional electron gas (2DEG). The purpose of this work is to identify lattice scattering as the microscopic source of 1/f noise in InAlAs/InGaAs HEMTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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