The phenomenon of memory in vanadium ox nitride films

Autor:	A. K. Amonov, Kh O. Urinov, J. O. Urinov, A. Sh Abduganiev, Kh A. Jumanov
Rok vydání:	2020
Předmět:	History Materials science chemistry Chemical engineering Vanadium chemistry.chemical_element Nitride Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1515:022076
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1515/2/022076
Popis:	Vanadium oxides are representatives of a wide class of compounds possessing a metal-insulator phase transition. The properties of both the oxides themselves and their solid solutions with oxides of other metals have been well studied. The question of the possibility of dissolving nonmetallic components in the V-O system and its wobbling on the metal-insulator phase transition remain an open question. The solution of this problem, apart from the scientific side can also have practical significance: in spite of the wide possibilities and uses of vanadium oxides in optoelectronics, microwave technology and other fields, the need to search for materials with given temperatures of metal-insulator phase transition and electro-physical characteristics is obvious. In this paper, an attempt is made to dissolve nitrogen in vanadium dioxide films during their deposition by thermolysis of nitrogen-containing alkoxy derivatives.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ad7633b65e23ddc540e3f6ff4f02b85 https://doi.org/10.1088/1742-6596/1515/2/022076 Zobrazit plný text záznamu