A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier
| Autor: | Y. Ayasli, L.D. Reynolds, R.A. Pucel, J.L. Vorhaus, R. Mozzi |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Radiation
Materials science business.industry Amplifier Transconductance Flatness (systems theory) Electrical engineering Distributed amplifier Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Noise (electronics) Microstrip Transmission line Operational transconductance amplifier Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 30:976-981 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/tmtt.1982.1131186 |
| Popis: | This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and +-1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines. In this approach GaAs FET's periodically load input and output microstrip lines and provide the coupling between them with proper phase through their transconductance. Experimental results and the circuit details of such a structure are discussed. Initial results of a noise analysis and predictions on the noise performance are also given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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