| Autor: | A. V. Zuev, V. V. Grigor'ev, S. A. Shcherbakov, A. D. Kiryukhin, V. V. Zuev, V. I. Chmyrev, A. V. Karelin, G. M. Voronkova, Yu. A. Bykovskii |
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| Rok vydání: | 2001 |
| Předmět: |
Diffusion transport
Silicon General Chemical Engineering Photoconductivity Diffusion Inorganic chemistry technology industry and agriculture Metals and Alloys chemistry.chemical_element Dark conductivity Tungsten engineering.material Acceptor Inorganic Chemistry chemistry Coating Materials Chemistry engineering |
| Zdroj: | Inorganic Materials. 37:651-657 |
| ISSN: | 0020-1685 |
| Popis: | Data are presented on the electrical activity of Au in Czochralski Si heat-treated and diffusion-doped under various conditions. The results are interpreted in terms of force fields responsible for changes in the concentration of electrically active centers. Long-term heat treatment between 700 and 1050°C is shown to have a significant effect on the acceptor behavior of Au in diffusion-doped Si. The concentration of Au acceptors is sensitive to the surface condition in the course of heat treatment: a tungsten coating increases the Au concentration in the bulk of diffusion-doped Si. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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