Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant
| Autor: | Kuntal Joardar, Tracey L. Krakowski, Fan-Chi Hou, Li Jen Choi, Hal Edwards, Niu Jin |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Transistor Semiconductor device modeling Differential amplifier Hardware_PERFORMANCEANDRELIABILITY law.invention Threshold voltage Computer Science::Hardware Architecture Computer Science::Emerging Technologies Integrated injection logic CMOS law Hardware_INTEGRATEDCIRCUITS Optoelectronics Halo business Degradation (telecommunications) |
| Zdroj: | ESSDERC |
| DOI: | 10.1109/essderc.2014.6948848 |
| Popis: | We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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