Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source

Autor:	Takafumi Yao, Akihiro Ohtake, L. H. Kuo, Shiro Miwa, C. G. Jin, K. Kimura, Kazunobu Tanaka, Tetsuji Yasuda
Rok vydání:	1997
Předmět:	Materials science Photoluminescence RF power amplifier Doping Analytical chemistry Plasma Condensed Matter Physics Acceptor Spectral line Electronic Optical and Magnetic Materials Materials Chemistry Radio frequency Electrical and Electronic Engineering Molecular beam epitaxy
Zdroj:	Journal of Electronic Materials. 26:705-709
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-997-0219-0
Popis:	We have studied the p-type doping in ZnSe molecular beam epitaxial growth using a novel high-power (5 kW) radio frequency (rf) plasma source. The effect of growth conditions such as the rf power, the Se/Zn flux ratio and the growth temperature on p-ZnSe:N was investigated. The net acceptor concentration (NA—ND) of around 1 × 1018 cm−3 was reproducibly achieved. The activation ratio ((NA—ND)/[N]) of p-ZnSe:N with NA—ND of 1.2 × 1018 cm−3 was found to be as high as 60%, which is the highest value so far obtained for NA—ND ∼ 1018 cm−3. The 4.2K photoluminescence spectra of p-ZnSe:N grown under the optimized growth condition showed well-resolved deep donor-acceptor pair emissions even with high NA—ND.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ac5a02eb88ce806f31b2c881f376869 https://doi.org/10.1007/s11664-997-0219-0 Zobrazit plný text záznamu Full text from SpringerLink