Mechanisms of writing and decay of holographic gratings in semiconducting CdF2:Ga

Autor:	R.A. Linke, I. Redmond, Pavel P. Fedorov, A. S. Shcheulin, I. I. Buchinskaya, A. I. Ryskin, B. P. Sobolev, E. V. Miloglyadov
Rok vydání:	1998
Předmět:	Free electron model Materials science business.industry Holography General Physics and Astronomy Optical storage Electron Grating law.invention Crystal Semiconductor law Optoelectronics business Refractive index
Zdroj:	Journal of Applied Physics. 83:2215-2221
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.366959
Popis:	We consider the mechanisms responsible for the photoinduced change in the optical properties of semiconducting CdF2 crystals with metastable Ga impurities forming DX centers. Unlike the case of compound semiconductors with DX centers (GaAlAs:Si, GaAlAs:Te, CdZnTe:Cl), this change is caused not by free electrons but by a redistribution of electrons between deep and shallow localized states. The resulting modification of the refractive index of the crystal allows writing of persistent holographic gratings at temperatures up to 200 K, high for this class of holographic materials. Holographic characteristics of CdF2:Ga crystals such as refractive index change, sensitivity, and grating decay are described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ab45e1b08149f99a4326d7caec708da https://doi.org/10.1063/1.366959 Zobrazit plný text záznamu