Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments
| Autor: | Andreas Schletz, Sebastian Letz, Christoph Friedrich Bayer, Shize Wang, Katsuaki Suganuma, Zechun Yu, Felix Hausler |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science 05 social sciences Temperature cycling Direct bonding 01 natural sciences Stress (mechanics) Grain growth Stress migration 0103 physical sciences Shear strength 0501 psychology and cognitive sciences Wafer Composite material 050104 developmental & child psychology Hillock |
| Zdroj: | 2019 International Conference on Electronics Packaging (ICEP). |
| DOI: | 10.23919/icep.2019.8733496 |
| Popis: | In this study, Ag stress migration bonding (SMB) is demonstrated with various Ag film materials and bonding conditions. The main effects and interactions of various processing parameters such as bonding temperature, process time and applied pressure on the interfacial shear strength of the DUTs are firstly investigated via the design of experiments (DoE) method. The hillock and grain growth process in Ag films deposited on a Si substrate depending on process temperature and time has been investigated. Hillock formation is clearly observed on all film surfaces at 300 °C. Furthermore, various direct bonding tests are carried out with the optimal parameters using two different metal-stacks, Cr/Ni/Ag and Ti/Ag. Compared to the Cr/Ni/Ag metallized samples, a highly increased shear strength of 73 MPa is achieved with Ti/Ag film. In addition, the lifetime of direct bonded Ag joints was examined by passive thermal cycling tests. The results show no significant change in the shear strength after 700 thermal cycles. |
| Databáze: | OpenAIRE |
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