EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS
| Autor: | V. A. Sazonov, A. V. Klekovkin, S. A. Zinov’ev, I. P. Kazakov, N. I. Borgardt, V. N. Kukin |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed Matter::Other business.industry Right angle Heterojunction Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials 010309 optics Condensed Matter::Materials Science Electron diffraction Transmission electron microscopy 0103 physical sciences Optoelectronics business Layer (electronics) |
| Zdroj: | Bulletin of the Lebedev Physics Institute. 47:365-370 |
| ISSN: | 1934-838X 1068-3356 |
| DOI: | 10.3103/s106833562012012x |
| Popis: | The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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