Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
| Autor: | C. Mark Johnson, Irina P. Nikitina, Nicolas G. Wright, A.B. Horsfall, Konstantin Vassilevski |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Annealing (metallurgy) Graphene Scattering Mechanical Engineering chemistry.chemical_element Nanotechnology Condensed Matter Physics law.invention chemistry.chemical_compound Nickel symbols.namesake Optical microscope chemistry Chemical engineering Mechanics of Materials law Silicon carbide symbols General Materials Science Graphite Raman spectroscopy |
| Zdroj: | Materials Science Forum. :589-592 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.645-648.589 |
| Popis: | Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on silicon carbide followed by wet processing to remove the nickel silicide. To identify and characterize the fabricated FLG films, micro-Raman scattering spectroscopy, AFM and optical microscopy have been used. The films grown on samples with initially deposited nickel thinner than 20 nm show clear graphene footprints in micro-Raman scattering spectra, namely a single component, Lorentzian shape 2D band with FWHM remarkably lower than that of the 2D peak of graphite. |
| Databáze: | OpenAIRE |
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