Construction of high-quality CdSe NB/graphene Schottky diodes for optoelectronic applications
| Autor: | Haipeng Zhao, Lingzhi Du, Yanhua Zhang, Youan Lei |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Graphene Mechanical Engineering Future application Schottky diode Nanotechnology Chemical vapor deposition Condensed Matter Physics Monolayer graphene law.invention Quality (physics) Semiconductor Rectification Mechanics of Materials law Optoelectronics General Materials Science business |
| Zdroj: | Materials Letters. 131:288-291 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2014.06.005 |
| Popis: | High-quality CdSe nanobelts (NBs) and monolayer graphene were synthesized via a chemical vapor deposition (CVD) method. Schottky diodes based on CdSe NBs/graphene have been fabricated and investigated. The as-fabricated Schottky diodes exhibit excellent rectification characteristic with rectification ratio up to 10 3 within ±2 V in the dark and distinctive photoresponse to light switching between on and off. Further analysis reveals that the Schottky diodes were highly sensitive to light illumination with very good stability, reproducibility and fast response speeds of 47/122 μs. Our results suggest that CdSe NBs/graphene Schottky diodes have potential future application in integrated nano-optoelectronic systems. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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