| Autor: | Jun Sik Jeoung, Philip L. Anderson, Supapan Seraphin, Benedict Johnson |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Auger electron spectroscopy
Materials science Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Rutherford backscattering spectrometry Microstructure Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallinity Ion implantation chemistry Transmission electron microscopy Electrical and Electronic Engineering |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 13:303-308 |
| ISSN: | 0957-4522 |
| DOI: | 10.1023/a:1015528226182 |
| Popis: | The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). Silicon substrates were implanted at 65 keV with a dose of 4.5×1017 O+ cm−2, followed by annealing at various temperatures. TEM results show that the defects observed in the as-implanted material (stacking faults and {1 1 3} defects) were reduced after annealing at 900 °C for 2 h and were eliminated after annealing at 1100 °C for 2 h. A continuous buried oxide (BOX) layer was formed after annealing at 1300 °C for 6 h. Numerous silicon islands were present in the BOX layer. The silicon islands can be traced to a precursor structure that developed at the implantation step. RBS results indicate that the crystallinity of the top Si layer is significantly restored after annealing at 1100 °C for 2 h and is completely restored after annealing at 1300 °C for 6 h. It was also found through AES analysis that the redistribution of oxygen during annealing is initiated at 1100 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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