Investigation of BiFeO3/HfO2 gate stack for ferroelectric field effect transistors in IOT applications
| Autor: | Pramod Narayan Tripathi, Rajesh Kumar Jha, Sanjeev Kumar Ojha, Alexey Nazarov |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Fabrication Silicon business.industry chemistry.chemical_element Substrate (electronics) Dielectric Condensed Matter Physics Ferroelectricity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Capacitor chemistry law Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:22517-22526 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | We present the fabrication and characterization of a metal-ferroelectric-insulator-silicon field effect transistor (MFIS-FET) for high-speed and non-volatile memory applications. Ferroelectric BiFeO3 and high-k dielectric HfO2 films were deposited by the radio frequency sputtering and integrated on the silicon substrate to realize the FET structure. BiFeO3 film of a constant thickness (200 nm) and HfO2 film of varying thickness from 5 to 20 nm was selected for the different capacitor structure fabrication and parameter optimization. Structural characteristics of the BiFeO3 film were obtained using x-ray diffraction (XRD) and scanning electron microscopy. Structural characteristics show the ferroelectric film of polycrystalline structure with the grain size of ≈ 26 nm at the annealing temperature of 500 °C. The ferroelectric film optimization was carried out at different annealing temperatures to obtain the crystalline structure. Effect of insulator layer thickness on the MFIS structure memory window (MW) and leakage current density was investigated to select an optimized buffer layer thickness for the FET fabrication. MFIS-FET with 10 nm buffer layer was fabricated from the optimized parameters that show a MW of 26.7 V and the drain current ON–OFF ratio higher than 106 for the voltage sweep of ± 30 V. |
| Databáze: | OpenAIRE |
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