Electrical characterization of Hg1−xCdxTe (0.126≤x≤0.58) grown by organometallic vapor phase epitaxy

Autor:	J. A. Ellsworth, J. D. Parsons, S. R. Hahn, H. R. Vydyanath
Rok vydání:	1994
Předmět:	Electron mobility Atmospheric pressure Electrical resistivity and conductivity Annealing (metallurgy) Impurity Hall effect Chemistry Inorganic chemistry Analytical chemistry General Physics and Astronomy Epitaxy Acceptor
Zdroj:	Journal of Applied Physics. 76:385-389
ISSN:	1089-7550 0021-8979
Popis:	Epilayers of Hg1−xCdxTe (mercury cadmium telluride: MCT) were grown at 300 °C, under atmospheric pressure, in a cold wall annular reactant inlet inverted‐vertical reactor chamber. As‐grown MCT surfaces (0.126≤x≤0.58) were specular and free of visible stacking faults. Their growth rate and composition were linear functions of the dimethylcadmium flow rate (QCd), for QCd≤0.031 sccm. As‐grown epilayers exhibited n‐type characteristics at x≤0.40 and p‐type characteristics at x=0.580. The mobility (μ) in Hg annealed layers, which were n‐type as‐grown, decreased by a factor of 3, on average. This reduction in μ, after Hg annealing, is ascribed to the presence of acceptor impurities, such as copper, which propagate into the epilayers during growth process. Hall measurements as a function of temperature, performed on a Hg0.792Cd0.208Te layer, gave a minimum concentration of 1.8×1015 cm−3 and a maximum mobility of 3.8×104 cm2/V s, at approximately 180 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2aa56b7181786524cddcc2a5caed76f0 https://doi.org/10.1063/1.357085 Zobrazit plný text záznamu