Experimental Determination of Numerical–Analytical Model Coefficients of Electrophysical Processes in Silicon Power Devices

Autor:	A. B. Ershov, S. V. Anikuev, Sh. Zh. Gabrielyan, I. K. Sharipov
Rok vydání:	2018
Předmět:	Materials science Semiconductor Silicon chemistry business.industry Mechanical engineering chemistry.chemical_element Power semiconductor device Electrical and Electronic Engineering Current (fluid) System of linear equations business Power (physics)
Zdroj:	Russian Electrical Engineering. 89:417-420
ISSN:	1934-8010 1068-3712
DOI:	10.3103/s1068371218070064
Popis:	A method has been presented of experimental determination of numerical–analytical model coefficients describing electrophysical processes in silicon power devices that does not use “transistance” (the effect of on-again modes) to decrease loss of power in a device. It has been demonstrated that experimental determination of the coefficients allows one to dispense with numerical solutions of the fundamental systems of equations of semiconductors and use a low-level model for solution of practical problems related to the maximum permissible current loads of silicon power devices in regimes specified by a customer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a9a8edfc4dcba79da36fc73936ffa72 https://doi.org/10.3103/s1068371218070064 Zobrazit plný text záznamu Full text from SpringerLink