Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
| Autor: | S. E. Pritchin, Nickolai I. Klyui, V.B. Lozinskii, A.I. Liptuga, M. G. Kogdas, A. P. Oksanych, V. N. Dikusha, A. L. Perekhrest |
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| Rok vydání: | 2017 |
| Předmět: |
Electromagnetic field
Materials science Hydrogen Infrared Physics::Optics chemistry.chemical_element 02 engineering and technology Radiation 01 natural sciences symbols.namesake 0103 physical sciences Microscopy 0202 electrical engineering electronic engineering information engineering Transmittance 010302 applied physics business.industry 020208 electrical & electronic engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry symbols Optoelectronics business Raman spectroscopy Semi insulating |
| Zdroj: | Semiconductors. 51:305-309 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment. |
| Databáze: | OpenAIRE |
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