Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation

Autor:	H. Yamasaki, V. K. Eu, Milton Feng, J.M. Schellenberg, H. Kanber, E. T. Watkins
Rok vydání:	1982
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Doping Semiconductor device Noise figure law.invention Ion implantation law Optoelectronics Equivalent circuit MESFET Field-effect transistor business
Zdroj:	Applied Physics Letters. 40:802-804
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.93265
Popis:	Low noise GaAs metal‐semiconductor field‐effect transitors (MESFET’s) have been made by direct ion implantation into high pressure liquid encapsulated Czochralski (HPLEC) undoped substrates and unintentionally doped high resistivity buffer layers. A noise figure of 1.3 dB with 10.3‐dB associated gain has been achieved at 12 GHz, and a 2.2‐dB noise figure with 7.4‐dB associated gain has been measured at 18 GHz with a 0.6‐μm gate length by 300‐μm gate width FET device, fabricated from a HPLEC undoped substrate. Comparable dc and rf performance has also been achieved for devices fabricated from undoped buffer layers. Equivalent circuit elements have been evaluated in an effort to understand the critical parameters necessary to achieve these results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a9329b2f33967b02ba21c9da5d04911 https://doi.org/10.1063/1.93265 Zobrazit plný text záznamu