InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3Post Remote-Plasma Treatment
| Autor: | Chia-Hsun Wu, Edward Yi Chang, Po-Chun Chang, Yueh-Chin Lin, Quang Ho Luc, Simon M. Sze, Yen-Ku Lin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Passivation Transistor Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law 0103 physical sciences MOSFET Electronic engineering Remote plasma Electrical and Electronic Engineering 0210 nano-technology Drain current Layer (electronics) Indium gallium arsenide High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 38:310-313 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164 mA/mm ( ${I}_{ \mathrm{\scriptscriptstyle OFF}} \,\,{=}\,\,{100}$ nA/ $\mu \text{m}$ and ${V} _{\mathrm {DD}} \,\,{=}\,\,{0.5}$ V), compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller ${V}_{\mathrm {TH}}$ and a lower ${G}_{\mathrm {m}}$ were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment. |
| Databáze: | OpenAIRE |
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