Photoelectric emission from GexSi1-x mixed crystals

Autor:	E. Kapitány, G. Gergely, J. Peisner
Rok vydání:	1972
Předmět:	Nuclear and High Energy Physics Materials science Physics::Instrumentation and Detectors Fermi level Analytical chemistry Photoelectric effect Epitaxy Isotropic etching symbols.namesake Excited state Electron affinity symbols Quantum efficiency Work function
Zdroj:	Acta Physica Academiae Scientiarum Hungaricae. 31:361-366
ISSN:	0001-6705
DOI:	10.1007/bf03156979
Popis:	Photoemission of mixed crystalline GexSi1-x samples was studied. Thin epitaxial layers on Si substrates were prepared by gaseous transport process. Measurements were made in 10−9 torr UHV on atomic clean surfaces prepared by chemical etching and heat treatment in vacuum. The quantum efficiency, threshold of photoemission, work function, electron affinity and energy distribution of photoelectrons excited by 4–6.2 eV photons were determined. A gradual shift of characteristics with composition was observed. The work function (surface Fermi level) of the samples, determined by the retarding field method of Hughes, corresponded to the bulk Fermi level.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a580456affdd5586eca977f0e5dd329 https://doi.org/10.1007/bf03156979 Zobrazit plný text záznamu Full text from SpringerLink