An Adaptive Thermal Equivalent Circuit Model for Estimating the Junction Temperature of IGBTs

Autor:	Kexin Wei, Zhen Hu, William Gerard Hurley, Mingxing Du
Rok vydání:	2019
Předmět:	Temperature gradient Materials science Soldering Bipolar junction transistor Energy Engineering and Power Technology Mechanical engineering Equivalent circuit Junction temperature Insulated-gate bipolar transistor Electrical and Electronic Engineering Temperature measurement Voltage
Zdroj:	IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:392-403
ISSN:	2168-6785 2168-6777
DOI:	10.1109/jestpe.2018.2796624
Popis:	Implementation of real-time health assessment and thermal management of insulated gate bipolar transistors (IGBTs) require thermal equivalent circuit models that can be used to predict the junction temperature of the modules. Solder aging in IGBTs has a substantial impact on the accuracy of junction temperatures estimated by the models. This paper proposes an adaptive thermal equivalent circuit model that can estimate the junction temperature of IGBTs with precision under solder aging conditions. First, the solder aging process is monitored in real time by the temperature gradient of the baseplate of the IGBT module, which is easily implemented by placing two thermal sensors at the interface between the baseplate and the cold plate. Then, when the solder aging is detected, the actual junction temperature obtained by an ON-state collector–emitter voltage of the IGBT is utilized to update model parameters based on the thermal behavior of the device. By combining the two stages, the effect of solder aging on the accuracy of the junction temperature estimate is removed in time. Simulation and experimental results are provided to verify the effectiveness of the proposed method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a52bc4467452f4085e6fc1b122eb748 https://doi.org/10.1109/jestpe.2018.2796624 Zobrazit plný text záznamu