| Autor: |
Taewon Jin, Sanghyeon Kim, Jae-Hoon Han, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nanoscale Advances. 5:1316-1322 |
| ISSN: |
2516-0230 |
| Popis: |
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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