Preparation of Er(Co,Cu)5 Alloy Thin Films on Cr(211) Underlayer
Autor: | Kana Serizawa, Nobuyuki Inaba, Fumiyoshi Kirino, Mitsuru Ohtake, Masaaki Futamoto |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Alloy 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid law.invention Orientation (vector space) Crystallography law Phase (matter) 0103 physical sciences engineering Electrical and Electronic Engineering Thin film Crystallization 0210 nano-technology Bar (unit) |
Zdroj: | IEEE Transactions on Magnetics. 54:1-4 |
ISSN: | 1941-0069 0018-9464 |
DOI: | 10.1109/tmag.2018.2817618 |
Popis: | Er17(Co1− x Cu x )83 (at. %, $x = 0-1$ ) alloy thin films are prepared at 500 °C by employing Cr(211) underlayers hetero-epitaxially grown on MgO(110) substrates. Crystallographic phase formation is influenced by the Cu/Co composition. Amorphous film is formed for $x = 0$ , whereas epitaxial films are obtained for $x = 0.25-1$ . Cu atom addition into Er–Co film promotes crystallization. The films with $x = 0.25-0.5$ consist of a mixture of Er(Co,Cu)5 $(1\bar {1}00)$ and Er(Co,Cu)5(0001) crystals. The crystallographic orientation relationships are Er(Co,Cu)5 $(1\bar {1}00)[\bar {1}\bar {1}20]~\vert \vert $ Cr(211) $[\bar {1}11], (211)[1\bar {1}\bar {1}]$ and Er(Co,Cu)5 $(0001)[\bar {1}\bar {1}20]~\vert \vert ~\text {Cr}(211)[\bar {1}11], (211)[1\bar {1}\bar {1}]$ . However, with further increasing $x$ value, the crystallographic phase changes to a phase different from Er(Co,Cu)5. Control of the amount of Cu atom is important to stabilize the Er(Co,Cu)5 phase. |
Databáze: | OpenAIRE |
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