Thermoluminescence and Related Electronic Processes of 4H/6H-SiC

Autor: R. Helbig, Th. Stiasny
Rok vydání: 1997
Předmět:
Zdroj: physica status solidi (a). 162:239-249
ISSN: 1521-396X
0031-8965
Popis: Thermoluminescence (TL) and thermally stimulated conductivity (TSC) in the temperature range 10 to 300 K is a phenomenon to be observed in 6H/4H-SiC boule crystals. The effect is explained by the classical two-center model consisting of one species of trap and one species of recombination center. One is able to make an excellent fit of the calculated thermoluminescence obtained from the model to the experimental data (glow curves). The analysis of the glow peaks leads to the ionization energies of the involved traps. I3y comparing the obtained ionization energies of the traps with the known ionization energies of the doping species, the TL-active traps are identified with nitrogen for n-type crystals and aluminum or boron for p-type crystals. Analyzing the charge transfer during the TL process shows that one of the two involved centers acts as doping the other as compensation in thermal equilibrium. Information about the involved recombination center is obtained from excitation spectroscopy or from the recombination spectrum. The cut-off energy of the excitation spectrum determines the energetic position of the recombination centers in the band gap. TL turns out to be a method to distinguish between different species of compensation.
Databáze: OpenAIRE
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