Autor: |
Yanmei Li, Junyi Li, Lihua Zheng, Guozhao Chen, Lan Xuexin, Xuhui Peng |
Rok vydání: |
2019 |
Předmět: |
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Zdroj: |
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging. |
DOI: |
10.1117/12.2512314 |
Popis: |
Low temperature poly silicon technology with a temperature of 400℃ was developed and discussed for the application of flexible liquid crystal display (LCD). By optimizing the doping and activation processes, the TFT device with a mobility of 80 cm 2 /V•s was fabricated successfully. Also we studied the mechanism of doping and activation at 400℃, and found out that the upper limit of implanted dosage and electrical activation rate were 2 × 10 14 ions/cm 2 and 20%, respectively. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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