Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers
| Autor: | Wolfgang Skorupa, G. A. Kachurin, J. von Borany, Lars Rebohle, Rossen Yankov, Ida E. Tyschenko, H. Fröb, Karl Leo |
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| Rok vydání: | 1997 |
| Předmět: |
Flash-lamp
Materials science Photoluminescence Annealing (metallurgy) business.industry Silicon dioxide Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound chemistry Optoelectronics Photoluminescence excitation Electrical and Electronic Engineering business Spectroscopy |
| Zdroj: | Microelectronic Engineering. 36:107-110 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(97)00026-9 |
| Popis: | Strong blue (around 470 nm) and violet (around 395 nm) photoluminescence (PL) at room temperature (RT) was obtained from thermally-grown SiO 2 films on crystalline Si implanted with Si + and Ge + ions, respectively. Photoluminescence excitation (PLE) spectroscopy measurements indicate maximum PL at 248 nm (for Si + ) and 242 nm (for Ge + ). The blue PL intensity was investigated as a function of subsequent furnace and flash lamp annealing. The results obtained are interpreted in terms of the excess atoms introduced in the SiO 2 network. |
| Databáze: | OpenAIRE |
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